Perpendicular magnetic recording medium

ABSTRACT

A perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substrate ( 1 ), and at least a nonmagnetic underlayer ( 2 ), a magnetic recording layer ( 3 ), and a protective layer ( 4 ) formed in this order on the nonmagnetic substrate ( 1 ), the magnetic recording layer ( 3 ) comprises a low K u  region ( 31 ) layer having a perpendicular magnetic anisotropy constant (K u  value) of not more than 1×10 5  erg/cm 3 , and a high K u  region ( 32 ) layer having a K u  value of at least 1×10 6  erg/cm 3 . Moreover, the magnetic recording layer ( 3 ) is made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.

This is a continuation of application Ser. No. 11/032,691 filed 10 Jan.2005, the entire contents of which are herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a magnetic recording medium, and inparticular to a perpendicular magnetic recording medium for use in anyof various magnetic recording devices such as an external storage devicefor a computer.

2. Description of the Related Art

To increase recording density in magnetic recording, the perpendicularmagnetic recording method is attracting attention as an alternative tothe conventional longitudinal magnetic recording method. This isbecause, compared with the conventional longitudinal magnetic recordingmethod, the perpendicular magnetic recording method has advantages inthat there is high thermal stability at a high recording density, andwriting can be carried out sufficiently even with a recording mediumhaving a high coercivity, and hence the recording density limit for thelongitudinal magnetic recording method can be exceeded.

With a perpendicular magnetic recording medium, to record informationwith the direction of magnetization being perpendicular to the filmplane of the magnetic recording layer, the magnetization must be stablymaintained in the direction perpendicular to the film plane. Themagnetic recording layer used in such a perpendicular magnetic recordingmedium is thus required to have a high perpendicular magnetic anisotropyconstant (K_(u) value). The K_(u) value of the magnetic recording layerin perpendicular magnetic recording media currently being studied isapproximately at least 1×10⁶ erg/cm³.

With magnetic grains having uniaxial magnetic anisotropy, the magnitudeof magnetic field required to reverse the magnetization is called theanisotropy field H_(k), and in general H_(k) is expressed in terms ofthe saturation magnetization M_(s) and the K_(u) value asH_(k)=2K_(u)/M_(s). To bring about magnetization reversal, a magneticfield greater than H_(k) is required, and this value is proportional tothe K_(u) value. With a magnetic recording medium, if H_(k) is too high,then magnetization reversal upon writing using a magnetic head will thusbe insufficient, and hence proper operation will no longer be possible;a suitably moderate H_(k) value is thus required.

With a magnetic recording medium which is an aggregate of magneticgrains, the average magnetization reversal field, which is called thecoercivity H_(c), is determined by the distribution of the axes of easymagnetization and the H_(k) values of the individual magnetic grains,and the strength of magnetic interactions between the magnetic grainsand so on. In the case that magnetic interactions between the magneticgrains are small, the H_(c) value approaches the H_(k) value.

Moreover, the energy barrier E that must be surmounted to reverse themagnetization is given by E=K_(u)V(1−H/H_(k))², where H is the magneticfield applied in the direction of the axis of easy magnetization, and Vis the grain volume. If this energy barrier E is not sufficiently highrelative to the thermal energy k_(B)T (k_(B) is Boltzman's constant, Tis the absolute temperature), then the magnetization will reverse underthe influence of thermal energy. This is called thermal fluctuation (orthermal disturbance) of the magnetization, and implies loss ofinformation on the magnetic recording medium; the value of K_(u)V, whichdetermines the energy barrier E, must thus be kept relatively high.Moreover, even if thermal fluctuation of the magnetization does not leadto loss of information, thermal fluctuation will surface as medium noisecalled reverse magnetic domain noise caused by partial reversal ofrecorded bits.

Note that K_(u)V/k_(B)T is generally used as an indicator of thermalfluctuation, but this assumes that an external magnetic field is notbeing applied; an indicator of thermal fluctuation when a magnetic fieldH is being applied uses the energy barrier E described above, and isthus K_(u)V (1−H/H_(k))²/k_(B)T.

Furthermore, to reduce the medium noise and thus improve the quality ofrecorded information signals, i.e. to improve the signal-to-noise ratio(SNR), it is necessary to reduce the value of the activation grain sizeD=V/δ (here, δ is the thickness of the magnetic recording layer), i.e.make the units of magnetization reversal small. In the case that theunits of magnetization reversal are small, minute recorded bits can beproperly written, and hence the SNR is improved. Many studies have thusbeen carried out into reducing the value of D with perpendicularmagnetic recording media. To reduce the value of D, it is effective toreduce the crystal grain diameter in the magnetic recording layer, andmoreover reduce magnetic interactions between the crystal grains.

From the above, when the value of D is lowered to improve the SNR, thevalue of V drops, and hence a high K_(u) value becomes necessary tomaintain the value of the energy barrier E required to keep themagnetization stable. On the other hand, in the case that the K_(u)value is kept high, the H_(k) value increases, i.e. the magnetic fieldrequired to reverse the magnetization increases, and hence writing ofinformation with a magnetic head becomes difficult. That is, with amagnetic recording medium, it is very difficult to satisfy all of 1)improving the SNR, 2) making the magnetization thermally stable(decreasing the reverse magnetic domain noise), and 3) making writingwith a magnetic head easy, and there is a trade-off between these threefactors.

As perpendicular magnetic recording media the aim of which is, out ofthe above three factors, to both improve the SNR and make themagnetization thermally stable, there have been proposed perpendicularmagnetic recording media having so-called functionally separated typemagnetic recording layers in which a plurality of magnetic recordinglayers having different K_(u) values are formed on top of one another(see, for example Japanese Patent Application Laid-open No. 11-296833and Japanese Patent Application Laid-open No. 2000-76636).

In Japanese Patent Application Laid-open No. 11-296833, it is disclosedthat by forming on top of one another a layer of a region having a highK_(u) value so that the thermal stability of the magnetization is high(upper layer) and a layer of a region having a somewhat low K_(u) valueso that magnetic interactions between the crystal grains are small andhence the SNR is high (lower layer), a medium having high thermalstability of the magnetization and a good SNR can be produced. Note thatin an embodiment, it is disclosed that the K_(u) value of the upperlayer is made to be 2.5×10⁶ to 5×10⁶ erg/cm³, and the K_(u) value of thelower layer is made to be 1×10⁶ to 2.5×10⁶ erg/cm³.

Moreover, in Japanese Patent Application Laid-open No. 2000-76636, asimilar technical idea is disclosed, with it being disclosed thatmagnetic recording layers having different K_(u) values and crystalorientations are formed on top of one another, whereby similar effectsare obtained.

However, the matters disclosed in Japanese Patent Application Laid-openNo. 11-296833 and Japanese Patent Application Laid-open No. 2000-76636relate to simultaneously improving the SNR and making the magnetizationthermally stable, but no consideration is given to the ease of writingwith a magnetic head.

With increasing recording densities, there is an ever strengthening needto maintain a high K_(u) value and reduce the D value so that smallrecorded bits can be stably maintained, and with such a medium, it isvery important to secure ease of writing with a magnetic head.

SUMMARY OF THE INVENTION

In view of the above, it is an object of the present invention toprovide a perpendicular magnetic recording medium according to whichboth the thermal stability of the magnetization is good and writing witha magnetic head is easy, and moreover the SNR is improved.

The above object is attained as follows. That is, according to aninvention of claim 1, in the case of a perpendicular magnetic recordingmedium comprising a nonmagnetic substrate, a nonmagnetic underlayer, amagnetic recording layer and a protective layer formed in this order onthe nonmagnetic substrate, the magnetic recording layer comprises a lowK_(u) layer having a perpendicular magnetic anisotropy constant K_(u) ofnot more than 1×10⁵ erg/cm³, and a high K_(u) layer having aperpendicular magnetic anisotropy constant K_(u) of at least 1×10⁶erg/cm³.

According to this constitution, both the thermal stability of themagnetization can be improved and writing with a magnetic head can bemade easy. Following is an account of this effect. It is hypothesizedthat in the magnetic recording layer having the two-layer structurecomprising the low K_(u) layer and the high K_(u) layer, magneticcoupling of the magnetization occurs in the thickness direction, andhence magnetization reversal occurs all at once. As an approximation, ifthe K_(u) value of the low K_(u) layer is ignored, then the K_(u) valuefor the whole of the layered film structure decreases in accordance withthe increase in the thickness, but the M_(s) value of the low K_(u)region is retained, and hence the M_(s) value for the film structure asa whole does not change greatly, and thus as is clear from thepreviously mentioned formula H_(k)=2K_(u)/M_(s), the H_(k) valueeffectively decreases, and hence magnetization reversal becomes easy.

On the other hand, considering the energy barrier E=K_(u)V(1−H/H_(k))²,the value of V can be regarded as being the volume for the filmstructure as a whole, and hence the value of K_(u)V for the layered filmstructure as a whole is greater than the value of K_(u)V in the case ofonly a high K_(u) region. Here, the H_(k) value decreases as describedabove, and hence provided the externally applied magnetic field H isrelatively low, the extent of the decrease in the energy barrier can bekept down. That is, it becomes easy to produce a medium according towhich both the stability of the magnetization is good and writing with amagnetic head is easy. Note that a detailed quantitative descriptionwill be given later.

Moreover, as embodiments of the invention of claim 1 described above,the inventions of claims 2 to 7 described below are preferable. That is,preferably, in the case of the perpendicular magnetic recording mediumaccording to claim 1 described above, the high K_(u) layer comprises analloy thin film having Co as a principal component thereof with at leastPt added thereto and having a hexagonal close-packed (hcp) crystalstructure, and a preferred crystal orientation plane that is parallel tothe film plane of the high K_(u) layer is made to be the (002) plane(claim 2). Alternatively, in the case of the perpendicular magneticrecording medium according to claim 1 described above, the high K_(u)layer comprises a layered film in which layers of a Co alloy and analloy having Pt or Pd as a principal component thereof each having athickness of not more than 2 nm are formed alternately, and a preferredcrystal orientation plane that is parallel to the film plane of the highK_(u) layer is made to be the (111) plane.

With the magnetic recording layer according to claim 2 or claim 3, bysuitably adjusting the composition and layer structure thereof, a highK_(u) value can be obtained, which is suitable for forming the highK_(u) layer.

Furthermore, from the viewpoint of effectively reducing magneticinteractions between the crystal grains and thus improving the SNR, theinvention of claim 4 described below is preferable. That is, preferably,in the case of the perpendicular magnetic recording medium according toany one of claims 1 through 3 described above, the high K_(u) layercomprises crystal grains made of a ferromagnetic metal and nonmagneticgrain boundaries magnetically isolating the crystal grains from oneanother, and the nonmagnetic grain boundaries contain a nonmagneticoxide as a principal component thereof (claim 4). Note that to improvethe SNR, with a CoPt-based magnetic recording layer having an hcpstructure as in the invention of claim 2, there is also a method inwhich a nonmagnetic metal such as Cr, Ta or B is added so as to promoteformation of nonmagnetic grain boundaries.

Moreover, as embodiments relating to the low K_(u) layer, the inventionsof claims 5 and 6 described below are preferable. That is, preferably,in the case of the perpendicular magnetic recording medium according toany one of claims 1 through 4 described above, the low K_(u) layercomprises a metal or alloy thin film having a face centered cubic (fcc)crystal structure, and a preferred crystal orientation plane that isparallel to the film plane of the low K_(u) layer is made to be the(111) plane (claim 5). By orienting the (111) plane of the fcc structureso as to be parallel to the film plane, the crystal orientation whenforming the high K_(u) layer thereon can be suitably controlled.

Furthermore, preferably, in the case of the perpendicular magneticrecording medium according to any one of claims 1 through 5 describedabove, the low K_(u) layer comprises crystal grains made of aferromagnetic metal and nonmagnetic grain boundaries magneticallyisolating the crystal grains from one another, and the nonmagnetic grainboundaries contain a nonmagnetic oxide as a principal component thereof(claim 6). This invention is preferable from the viewpoint of improvingthe SNR.

Furthermore, with the inventions described above, a plurality ofmagnetic recording layers having different K_(u) values to one anotherare formed on top of one another so that magnetization reversal is madeto occur all at once; however, in the case that the saturationmagnetization M_(s) values of the magnetic recording layers greatlydiffer from one another, magnetic field leakage will occur at theinterface, and this will act as a demagnetizing field, resulting inmagnetization reversal occurring more readily than necessary. From theviewpoint of preventing this, the invention of claim 7 described belowis preferable. That is, preferably, in the case of the perpendicularmagnetic recording medium according to any one of claims 1 through 6described above, the ratio of the saturation magnetization M_(s) of thelow K_(u) layer to the saturation magnetization M_(s) of the high K_(u)layer is in a range of 0.8 to 1.2 (claim 7).

EFFECTS OF THE INVENTION

According to the present invention, there can be provided aperpendicular magnetic recording medium according to which the thermalstability of the magnetization is improved, and the ease of writing witha magnetic head is improved, in particular the overwrite characteristic,described below, is improved, and moreover the SNR is improved.

‘Overwriting’ is writing a new signal over an originally recorded signalwithout erasing the originally recorded signal. With a magneticrecording device, when overwriting data, an error may arise if theoriginal data is not replaced by new data. The overwrite characteristicgenerally represents the overwriting performance in terms of the degreeof decay of the original signal after overwriting the original signalwith a subsequent signal. Details will be given later.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of a perpendicular magneticrecording medium according to an embodiment of the present invention;

FIG. 2 is a graph showing changes with the low K_(u) region thickness inthe coercivity H_(c) value, according to examples of the presentinvention;

FIG. 3 is a graph showing changes with the low K_(u) region thickness inthe decay rate of the remanent magnetization M_(r) with the logarithm oftime, according to examples of the present invention; and

FIG. 4 is a graph showing the dependence of an overwrite characteristicvalue on the low K_(u) region K_(u) value, according to examples of thepresent invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Next, an embodiment of the present invention will be described withreference to FIG. 1. FIG. 1 is a schematic sectional view of aperpendicular magnetic recording medium according to an embodiment ofthe present invention.

The perpendicular magnetic recording medium of the present inventionshown in FIG. 1 has a structure in which at least a nonmagneticunderlayer 2, a magnetic recording layer 3, and a protective film(protective layer) 4 are formed in this order on a nonmagnetic substrate1. Note, however, that the effects of the present invention will stillbe obtained even if a seed layer or the like for controlling the crystalorientation and the crystal grain diameter of the nonmagnetic underlayer2 is provided between the nonmagnetic underlayer 2 and the nonmagneticsubstrate 1. Moreover, the effects of the present invention will alsostill be obtained even in the case that a relatively thick (thicknessapproximately several hundred nm) soft magnetic layer generally called abacking layer for improving the read-write sensitivity is providedbetween the nonmagnetic underlayer 2 and the nonmagnetic substrate 1.Furthermore, a liquid lubricant such as a perfluoropolyether may beapplied onto the protective film 4.

As the nonmagnetic substrate 1, for example a crystallized glass, achemically strengthened glass, or an Al alloy with plated NiP layer asused with ordinary magnetic recording media can be used.

The nonmagnetic underlayer 2 is used to suitably control the crystalgrain diameter, the grain boundary segregation structure and the crystalorientation of the magnetic recording layer 3 formed thereon. There areno particular limitations on the material and thickness of thenonmagnetic underlayer 2. For example, a thin film of thicknessapproximately 3 to 30 nm made of a Co alloy containing at leastapproximately 30 at % of Cr, or a metal such as Ti, Ru, Pt, or an alloycontaining Ti, Ru, Pt or the like can be used.

As the protective film 4, for example a thin film comprising mainlycarbon can be used.

Next, a description will be given of the magnetic recording layer 3. Asdescribed earlier, the magnetic recording layer 3 comprises a low K_(u)region 31 layer having a perpendicular magnetic anisotropy constant(K_(u) value) of not more than 1×10⁵ erg/cm³, and a high K_(u) region 32layer having a K_(u) value of at least 1×10⁶ erg/cm³. There are noparticular limitations on the order of forming the low K_(u) region 31and the high K_(u) region 32, but, for the purpose of efficientlyapplying a magnetic field produced by a magnetic head to the high K_(u)region 32, it is preferable to form the low K_(u) region 31 and the highK_(u) region 32 on the nonmagnetic underlayer 2 in this order, as shownin FIG. 1.

There are no particular limitations on the thicknesses of the tworegions, but it is not appropriate for the total thickness of themagnetic recording layer to exceed 30 nm, since then it will becomedifficult for magnetization reversal to occur all at once in thethickness direction. Furthermore, to apply the magnetic field producedby the magnetic head efficiently, the total thickness is preferablythinner at not more than 15 nm. By changing the ratio of the thicknessesof the low K_(u) region 31 and the high K_(u) region 32, the extent ofthe ease of magnetization reversal and the extent of the thermalstability of the magnetization can be controlled, and hence it ispreferable to set this thickness ratio in accordance with thetemperature and the magnetic head used.

To obtain a perpendicular magnetic recording medium with a layerstructure as described above suitable for increased recording density,as the high K_(u) region 32, as described earlier, it is preferable touse an alloy thin film having Co as a principal component thereof withat least Pt added thereto and having a hexagonal close-packed (hcp)crystal structure, and make the preferred crystal orientation plane thatis parallel to the film plane be the (002) plane, or else use a layeredfilm in which layers of a Co alloy and an alloy having Pt or Pd as aprincipal component thereof each having a thickness of not more thanapproximately 2 nm are formed alternately, and make the preferredcrystal orientation plane that is parallel to the film plane be the(111) plane.

Moreover, to improve the SNR, with such a CoPt-based magnetic recordinglayer having an hcp structure, although there is also a method in whicha nonmagnetic metal such as Cr, Ta or B is added so as to promoteformation of nonmagnetic grain boundaries, forming nonmagnetic grainboundaries comprising mainly an oxide as described earlier is preferablefor effectively reducing magnetic interactions between the crystalgrains and thus improving the SNR. As the nonmagnetic oxide, for examplepublicly known SiO₂, or else Cr₂O₃, MgO, ZrO₂ or the like can be used.

Furthermore, as the low K_(u) region 31, it is preferable to use a metalor alloy having a face centered cubic (fcc) crystal structure, and makethe preferred crystal orientation plane that is parallel to the filmplane be the (111) plane. By orienting the (111) plane of the fccstructure so as to be parallel to the film plane, the crystalorientation when forming the high K_(u) region 32 thereon can besuitably controlled. There are no particular limitations on the materialused for the low K_(u) region 31, but for example a thin film of an NiFealloy containing 40 to 90 at % of Ni, or such an NiFe alloy having up to10 at % of Nb, Mo, Cu or the like added thereto is suitable.

Here, for the low K_(u) region 31, reducing interactions between thecrystal grains is again necessary for improving the SNR, and hence it ispreferably to form nonmagnetic grain boundaries comprising mainly anoxide.

Furthermore, in the present invention, a plurality of magnetic recordinglayer regions having different K_(u) values to one another are formed ontop of one another so that magnetization reversal is made to occur allat once; however, in the case that the saturation magnetization M_(s)values of the magnetic recording layer regions greatly differ from oneanother, magnetic flux leakage will occur at the interface, and hence toprevent this, it is preferable to make the ratio between the M_(s)values of the magnetic recording layer regions be within a range of 0.8to 1.2.

EXAMPLES

Next, examples of the present invention will be described with referenceto FIGS. 2 to 4.

Example 1

Using a 2.5 inch disk-shaped chemically strengthened glass substrate asa nonmagnetic substrate, this substrate was washed, and was then putinto a sputtering apparatus, and a nonmagnetic underlayer made of Ru ofthickness 20 nm was formed using DC magnetron sputtering under an Ar gaspressure of 2.66 Pa (20 mTorr). Next, the Ar gas pressure was set to0.67 Pa (5 mTorr), and using a target of 90 mol % (78Ni-18Fe-4Mo) and 10mol % SiO₂ (the figures in the brackets are at %, likewise hereinafter),a low K_(u) region was formed using RF magnetron sputtering. Thethickness thereof was varied within a range of 0 to 10 nm.

Next, under an Ar gas pressure of 0.67 Pa (5 mTorr), using a target of90 mol % (85Co-15Pt) and 10 mol % SiO₂, a high K_(u) region was formedusing RF magnetron sputtering. The thickness thereof was varied within arange of 5 to 20 nm. Next, a 10 nm-thick carbon protective layer wasformed using DC magnetron sputtering, and then the substrate was removedfrom the vacuum, whereby a magnetic recording medium having aconstitution as shown in FIG. 1 was produced.

Note that for an NiFeMo—SiO₂ single-layer film and a CoPt—SiO₂single-layer film each of thickness 10 nm formed on the nonmagneticunderlayer as described above, the K_(u) values determined using amagnetic torque meter and correcting for the demagnetizing field energywere 2×10⁴ erg/cm³ and 4×10⁶ erg/cm³ respectively.

FIG. 2 is a graph showing the changes with the thickness of the lowK_(u) region in the coercivity H_(c) value measured using a vibratingsample magnetometer while applying a magnetic field in the directionperpendicular to the film plane for each of the perpendicular magneticrecording media produced. Moreover, FIG. 3 is a graph showing thechanges with the thickness of the low K_(u) region in the decay rate ofthe remanent magnetization M_(r) with the logarithm of time in a statein which the magnetic field has been set to zero after magneticallysaturating by applying a magnetic field of 20 kOe in the directionperpendicular to the film plane for each of the perpendicular magneticrecording media produced. Note that the time period over whichmeasurement was continued was 30 minutes. Moreover, in FIGS. 2 and 3,the data is plotted for three high K_(u) region thicknesses, that is 5nm, 10 nm and 20 nm.

As is clear from FIG. 2, the value of the coercivity H_(c) decreases asthe thickness of the low K_(u) region (nm) increases. This shows thatupon increasing the proportion of the magnetic recording layer taken upby the low K_(u) region, H_(c) of the magnetic recording layer as awhole decreases, and hence writing with a magnetic head becomes easier.

On the other hand, as is clear from FIG. 3, the decay rate of theremanent magnetization (%/decade) generally first decreases as thethickness of the low K_(u) region increases from 0 to approximately 5nm, although this does depend on the thickness of the high K_(u) region.This is because K_(u)V for the film as a whole increases in accordancewith the increase in the thickness of the low K_(u) layer, and thiscorresponds to the thermal stability increasing. If the thickness of thelow K_(u) region is further increased, then the contribution of the lowK_(u) region increases, and hence the decay rate again increases, butcombining with the results of FIG. 2, it can be seen that by suitablycontrolling the thicknesses of the low K_(u) region and the high K_(u)region, a medium for which H_(c) is low and hence writing with amagnetic head is easy, and moreover the thermal stability of themagnetization is high with the decay rate of the magnetization being lowcan be produced. This is further verified in Example 2 below.

Note that detailed description will be omitted, but because nonmagneticgrain boundaries comprising mainly SiO₂ were formed, a good SNR isobtained for the magnetic recording layer in the present example.

Example 2

The present example relates to verifying the overwrite characteristicfor magnetic recording media of the present invention.

Magnetic recording media having a constitution as shown in FIG. 1 wereproduced as in Example 1, except that the thickness of the low K_(u)region was fixed at 2.5 nm and the thickness of the high K_(u) regionwas fixed at 10 nm, and the composition of the target used when formingthe low K_(u) region was made to be any of five types (A to E) as shownin Table 1 below. Furthermore, after each medium had been removed fromthe vacuum, 2 nm of a liquid lubricant comprising a perfluoropolyetherwas applied thereon by spin coating. Note that in Table 1, the K_(u)value determined using a magnetic torque meter and correcting for thedemagnetizing field energy for a 10 nm-thick low K_(u) regionsingle-layer film formed on the nonmagnetic underlayer as described inExample 1 is also shown.

TABLE 1 Target used K_(u) (erg/cm³) A: 90 mol % (78Ni—18Fe—4Mo)—10 mol %SiO₂ 2 × 10⁴ B: 90 mol % (60Ni—40Fe)—10 mol % SiO₂ 5 × 10⁴ C: 90 mol %(78Co—22Cr)—10 mol % SiO₂ 1.5 × 10⁵   D: 90 mol % (75Co—20Cr—5Pt)—10 mol% SiO₂ 5 × 10⁵ E: 90 mol % (85Co—15Pt)—10 mol % SiO₂ 4 × 10⁶

FIG. 4 shows the dependence of the overwrite characteristic value forthe magnetic recording media produced (the five media A to E in Table 1)on the K_(u) value of the low K_(u) region. For the overwritecharacteristic, a 300 kFCI signal was initially written using a spinstand tester and a perpendicular magnetic recording single pole typehead (written track width 0.25 μm), a 40 kFCI signal was then writtenthereover, and then the overwrite characteristic was determined as theratio (in dB) between the 40 kFCI signal component and the remaining 300kFCI signal component out of the frequency components of the playbacksignal as measured using a spectrum analyzer. The larger the value ofthe overwrite characteristic, the less the original signal remains.

Note that ‘FCI’ above is an abbreviation for ‘flux changes per inch’ andis an amount showing the number of magnetic flux changes per inch, i.e.the recording density of written bits in the track direction. Forexample, the above ‘300 kFCI’ indicates that 300×1000=300,000 bits werewritten per inch. Moreover, ‘1.E+05’ on the horizontal axis in FIG. 4means ‘1×10⁵’.

It can be seen from Table 4 that, in the case that the K_(u) value ofthe low K_(u) region is less than 1×10⁵ erg/cm³, the overwritecharacteristic reaches 40 dB, which is level at which there is noproblem for practical use, whereas if the K_(u) value is greater thanthis, then the overwrite characteristic deteriorates, meaning that therewill be problems in terms of writing characteristics. Note that with allof the media, the decay rate of the remanent magnetization M_(r) withthe logarithm of time in a state in which the magnetic field has beenset to zero after magnetically saturating by applying a magnetic fieldof 20 kOe in the direction perpendicular to the film plane of the mediumwas less than 1%.

1. A perpendicular magnetic recording medium comprising: a nonmagneticsubstrate, a nonmagnetic underlayer, a magnetic recording layer, and aprotective layer formed in this order on the nonmagnetic substrate,wherein the magnetic recording layer comprises: a low K_(u) layer havinga perpendicular magnetic anisotropy constant K_(u) of not more than1×10⁵ erg/cm³; and a high K_(u) layer having a perpendicular magneticanisotropy constant K_(u) of at least 1×10⁶ erg/cm³, wherein the totalthickness of the magnetic recording layer is less than 30 nm.
 2. Theperpendicular magnetic recording medium according to claim 1, whereinthe high K_(u) layer comprises an alloy thin film having Co as aprincipal component thereof with at least Pt added thereto and having ahexagonal close-packed crystal structure, with a preferred crystalorientation plane that is parallel to the film plane of the high K_(u)layer made to be the (002) plane.
 3. The perpendicular magneticrecording medium according to claim 1, wherein the high K_(u) layercomprises a layered film in which layers of a Co alloy and an alloyhaving Pt or Pd as a principal component thereof each having a thicknessof not more than 2 nm are formed alternately, with a preferred crystalorientation plane that is parallel to the film plane of the high K_(u)layer made to be the (111) plane.
 4. The perpendicular magneticrecording medium according to claim 1, wherein: the high K_(u) layercomprises crystal grains made of a ferromagnetic metal and nonmagneticgrain boundaries magnetically isolating the crystal grains from oneanother, and the nonmagnetic grain boundaries contain a nonmagneticoxide as a principal component thereof.
 5. The perpendicular magneticrecording medium according to claim 1, wherein the low K_(u) layercomprises a metal or alloy thin film having a face centered cubiccrystal structure, with a preferred crystal orientation plane that isparallel to the film plane of the low K_(u) layer made to be the (111)plane.
 6. The perpendicular magnetic recording medium according to claim1, wherein: the low K_(u) layer comprises crystal grains made of aferromagnetic metal and nonmagnetic grain boundaries magneticallyisolating the crystal grains from one another, and the nonmagnetic grainboundaries contain a nonmagnetic oxide as a principal component thereof.7. The perpendicular magnetic recording medium according to claim 1,wherein a ratio of saturation magnetization M_(s) of the low K_(u) layerto saturation magnetization M_(s) of the high K_(u) layer is in a rangeof 0.8 to 1.2.
 8. A perpendicular magnetic recording medium comprising:a nonmagnetic substrate, a nonmagnetic underlayer, a magnetic recordinglayer, and a protective layer formed in this order on the nonmagneticsubstrate, wherein the magnetic recording layer comprises: a low K_(u)layer having a perpendicular magnetic anisotropy constant K_(u) of notmore than 1×10⁵ erg/cm³; a high K_(u) layer having a perpendicularmagnetic anisotropy constant K_(u) of at least 1×10⁶ erg/cm³, whereinthe low K_(u) layer and the high K_(u) layer are layered in this orderover the nonmagnetic underlayer.
 9. The perpendicular magnetic recordingmedium according to claim 8, wherein the total thickness of the magneticrecording layer is less than 30 nm.
 10. The perpendicular magneticrecording medium according to claim 8, wherein the high K_(u) layercomprises an alloy thin film having Co as a principal component thereofwith at least Pt added thereto and having a hexagonal close-packedcrystal structure, with a preferred crystal orientation plane that isparallel to the film plane of the high K_(u) layer made to be the (002)plane.
 11. The perpendicular magnetic recording medium according toclaim 8, wherein the high K_(u) layer comprises a layered film in whichlayers of a Co alloy and an alloy having Pt or Pd as a principalcomponent thereof each having a thickness of not more than 2 nm areformed alternately, with a preferred crystal orientation plane that isparallel to the film plane of the high K_(u) layer made to be the (111)plane.
 12. The perpendicular magnetic recording medium according toclaim 8, wherein: the high K_(u) layer comprises crystal grains made ofa ferromagnetic metal and nonmagnetic grain boundaries magneticallyisolating the crystal grains from one another, and the nonmagnetic grainboundaries contain a nonmagnetic oxide as a principal component thereof.13. The perpendicular magnetic recording medium according to claim 8,wherein the low K_(u) layer comprises a metal or alloy thin film havinga face centered cubic crystal structure, with a preferred crystalorientation plane that is parallel to the film plane of the low K_(u)layer made to be the (111) plane.
 14. The perpendicular magneticrecording medium according to claim 8, wherein: the low K_(u) layercomprises crystal grains made of a ferromagnetic metal and nonmagneticgrain boundaries magnetically isolating the crystal grains from oneanother, and the nonmagnetic grain boundaries contain a nonmagneticoxide as a principal component thereof.
 15. The perpendicular magneticrecording medium according to claim 8, wherein a ratio of saturationmagnetization M_(s) of the low K_(u) layer to saturation magnetizationM_(s) of the high K_(u) layer is in a range of 0.8 to 1.2.